The SiC and GaN power semiconductor market is likely to register substantial gains by 2027 owing to the rising government efforts towards renewable energy power generation, increasing adoption of GaN power module in consumer electronics applications, and rollout of government initiatives and subsidiaries to promote the adoption of EVs.

GaN and SiC are getting a lot of attention as the next-generation materials, replacing silicon. GaN or gallium nitride is known as a compound of nitrogen and gallium. Whereas SiC or silicon carbide is a compound of silicon and carbon. Semiconductors utilizing these compounds are referred as compound semiconductors.

These materials are also known as WBG or wide bandgap semiconductors owing to the energy required to blow up the electrons of these SiC and GaN mainly from the valence band to the conduction band. Both these materials enable smaller, quicker as well as much more reliable devices having higher efficiency in comparison to silicon-based materials. Consequently, these capabilities make it possible to lessen the lifecycle cost, volume, and weight in a broad range of applications.

The SiC and GaN power semiconductor market is segmented in terms of product, application, and regional landscape.

With respect to product, the market for SiC and GaN power semiconductor is classified into discrete GaN, discrete SiC, GaN power module, and SiC power module. Here, the GaN power module segment will witness a market growth of over 50% by the end of 2027. The growth is accredited to its low power consumption and compact features, which is helping them see widescale adoption in expansive consumer electronics sector.

Various industry players active in the market are focusing on developing new products to strengthen their market positions. For instance, in November 2020